Abstract
An extensive study of Co- and Ni-related centres in high-pressure synthetic diamond, using
electron spin resonance, optical absorption and luminescence techniques, has revealed that
most of these defects, in samples grown at low temperature (
), exhibit preferential alignment, i.e. a non-equal distribution over crystallographically
equivalent orientations. Remarkably, this observation applies not only to defects assumed to
involve only an Ni or a Co atom, but also to some Ni–N complexes. Annealing at
T>1600 °C
induces nitrogen mobility and the corresponding formation of numerous Ni–N- and
Co–N-related centres. This annealing eventually destroys the preferential polarization of
low-temperature centres.
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